Welcome and Opening

Stephen Las Marias, Editor of EE Times Asia/India, EDN Asia

Maurizio Di Paolo Emilio, Editor-in-chief of Power Electronics News and EEWeb, and Correspondent for EE Times

STMicroelectronics, Francesco Muggeri, Vice President of Marketing & Applications, Power Discrete & Analog, APeC/China

How innovative wide-band gap (WBG) technologies contribute to the sustainable world, in a sustainable way.

Efficient Power Conversion (EPC), Alex Lidow, CEO and Co-Founder

Power electronics has been dominated by MOSFETs for almost 40 years and by the year 2000, MOSFETs had hit their theoretical performance limit and its progress had been slowed down with the major focus on pricing. GaN provides significant opportunities for engineering designers to achieve higher performance by an order of magnitude better than their aging MOSFET ancestor. This has enabled users to significantly reduce costs, improve efficiency, shrink product size, offer new capabilities, and gain market share against their competitors. In this keynote speech, learn how GaN is revolutionizing power management applications such as motor drives for drones, e-bikes, scooters and power tools; DC-DC converters and solar applications.

GaN Systems , Stephen Coates , General Manager (Asia) and VP of Global Operation

The world is witnessing a data explosion and an unprecedented rise in reliance on electricity while fighting climate change becomes ever-urgent. Countries and industrial giants worldwide have committed to net zero or carbon-neutral targets with measurable actions.

Our world's sustainable future is linked to energy efficiency and GaN's innovative technology. From 400V and 800V EV power systems to titanium-rated PSUs in data centers, or motor drives for e-mobility, robotics, and industrial automation, GaN enables smaller, lighter, and more powerful power system designs with smaller energy loss and environmental footprint.

Arrow Electronics, Jacky Wan, Vice President, Supplier Management & Engineering - APAC

Arrow Electronics, Jason Khor, Senior Manager, Engineering

Wide Bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are becoming increasingly popular in industrial, consumer, automotive, and renewable energy applications due to their superior electrical properties. Our panel of in-house technical experts will share the trends and applications of WBG in these segments. WBG devices are expected to play a significant role in shaping the future of power electronics, so join us in riding the wave to the future!

Cambridge GaN Devices, Andrea Bricconi , Chief Commercial Officer

- 'This presentation will highlight the basics of gallium nitride (GaN) vs. silicon carbide (SiC) and vs. silicon (Si); why GaN is becoming popular; the different concepts of currently available GaN technologies and their peculiarities; and the impact of the broad adoption of GaN in terms of energy savings and on the environment. The benefit of broad adoption of GaN will also be examined to see the impact in terms of energy savings and reduced impact on the environment.

Infineon , Dr Ravinder Pal Singh , Product Application Engineer

Wide band gap semiconductor materials such as gallium nitride (GaN) and silicon carbide (SiC) are the ideal choice when looking for next generation of efficient power converter switches for a greener future. Due to the material properties, these WBG semiconductor devices are able to operate at higher voltages, temperatures, and frequencies, thus enabling higher power conversion efficiency, smaller size, lighter weight, lower overall cost – or all of these together.

Infineon offers the broadest product and technology portfolio including silicon, silicon carbide and gallium-nitride-based devices. In this session, we will understand the characteristics of latest WBG products and offerings from Infineon Technologies. The session will also highlight the different strengths brought by GaN based CoolGaN™ and SiC based CoolSiC™ into the application requirements.

The wide-bandgap market has experienced expansion and rising industrial acceptance. As technology advances, businesses are creating a wide range of products that offer advantages in a number of applications for the industrial, automotive, and consumer industries, among others. Wide-bandgap semiconductors like silicon carbide and gallium nitride are supplying the market with the proper input by offering fresh solutions to the challenges that designers confront in an era where "efficiency" is the watchword. Our panelists will discuss the challenges that engineers currently face in a variety of application contexts, as well as the obstacles that still need to be removed for widespread adoption and, as a result, to produce improved performance and lower costs that will benefit the industry as a whole.

Moderator:

Maurizio Di Paolo Emilio, Editor-in-chief of Power Electronics News and EEWeb and Correspondent for EE Times

Panelists:

- Thierry Bouchet, CEO, Wise Integration

- Andrea Bricconi, CCO, Cambridge GaN Devices

- Stephen Coates, General Manager (Asia) and VP of Global Operation, GaN Systems

- Amitava Das, Co-Founder & COO, Tagore Technology

- Pete Losee, Director of Technology Development, Qorvo

- Francesco Muggeri, Vice President of Marketing & Applications, Power Discrete & Analog, APeC/China, STMicroelectronics

Welcome and Opening

Stephen Las Marias, Editor of EE Times Asia/India, EDN Asia

Analog Devices, Daryl Wan, Regional Sales Director, India, ASEAN, ANZ

The presentation provides a high-level description of the challenges faced by power designers and how these pain points can be overcome.

NXP Semiconductors , Alvin Tan, Senior Marketing Manager

The cloud-connected EasyEVSE EV charging station development platform allows you to quickly setup a secure connection between a simulated electric vehicle supply equipment (EVSE) and cloud services provider. The platform shows how to exchange telemetry to manage a simulated EVSE and manage state- and low-level signaling to the electric vehicle.

Rohde & Schwarz, Gabriel Rojas, Application Engineer

This session is intended for engineers designing and testing high voltage designs. Learn about what the typical measurement scenarios are; what to keep in mind for probing point selection; and how to measure the current in power applications.

Welcome and Opening

Stephen Las Marias, Editor of EE Times Asia/India, EDN Asia

ASE, Inc., Mark Gerber, Sr. Director, Engineering & Technical Marketing

Demand for greater power efficiency is propelling the crucial role of packaging innovation as we accelerate towards a smarter and more sustainable world. During his keynote, Mark Gerber will explore the market trends elevating the need for power efficiency across the automotive, HPC, AI, and mobile markets. He will then discuss the latest trends in heterogeneous integration and chiplets, while describing how advanced packaging technologies are overcoming tough technical challenges and enabling a new era of highly complex power integration solutions.

UTAC Group, Hyungmook Choi (Michael Choi), VP of power business development

This presentation will provide insights into the latest developments in the semiconductor market and its applications in various industries, including the automotive and renewable energy sectors. It will highlight the role of WBG and semiconductor companies in reducing carbon emissions and their contribution to achieving global sustainability and explore the potential of SiC and GaN devices to meet the growing demand for high-performance and energy-efficient systems driven by the AI and EV charging station market.