Stephen Las Marias, Editor of EE Times Asia/India, EDN Asia

Welcome and Opening

Singapore Semiconductor Industry Association(SSIA)

Ang Wee Seng

Executive Director

In his keynote, Singapore Semiconductor Industry Association (SSIA) Executive Director Ang Wee Seng will talk about the trends in the power electronics industry, challenges, and opportunities, the new requirements from next-generation applications, where the industry is headed, and technology innovations happening to address the latest market and industry challeng

MASSPHOTON LIMITED

Dr. Eason Liao

CEO

We report GaN power HEMT with breakdown voltage >850 V grown by MBE on sapphire. High breakdown voltage >850 V is obtained by using ultra-thin AlN buffer grown by MBE and single-level gate field plate structure technique. MBE technique enables dopant-free buffer layer and pseudomorphic growth of epilayers, which is beneficial to the high reliability of GaN power HEMT. Single-level gate field plate technique helps reduce the total cost of fabrication and also contribute to the high reliability of GaN power HEMT. These merits shows the potential of the reported GaN power HEMT in the applications of high power electronics.

Efficient Power Conversion (EPC)

Pei-Cheng Huang

FAE, Asia

The increasing power demand in data centers, led by advances in artificial intelligence, is driving the need for converters with higher power density and efficiency. These converters typically consist of two stages: a Power Factor Correction (PFC) circuit and an Isolated DC-DC converter. The PFC operates from a supply voltage of 240 VAC and generates a 400 VDC bus. The DC-DC stage down converts to 50 V while providing isolation. In addition, such power supplies must comply with the recent requirements re leased by the Open Compute ORV3 standard and fit within the specific form factor and dimensions